Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors. - Sheng-Yi Huang; Kun-Ming Chen; Guo-Wei Huang; Cheng-Chou Hung; Wen-Shiang Liao; Chun-Yen Chang 002 (Microelectron. Reliab., 2008)

A Low-Noise and High-Gain Folded Mixer for a UWB System in 0.18-μm SiGe Bi-CMOS Technology. - Jun-Da Chen; Jia-Bin Qian; Sheng-Yi Huang (IEEE Trans. Circuits Syst. II Express Briefs, 2021)