Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties. - Lauren Hoang; Alwin Daus; Sumaiya Wahid; Jimin Kwon; Jung-Soo Ko; Shengjun Qin; Mahnaz Islam; Krishna C. Saraswat; H.-S. Philip Wong; Eric Pop (DRC, 2022)

First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation. - Sumaiya Wahid; Alwin Daus; Jimin Kwon; Shengjun Qin; Jung-Soo Ko; Krishna C. Saraswat; H.-S. Philip Wong; Eric Pop (DRC, 2022)

8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LRS for Low Power and Ultrahigh-density Memory. - Shengjun Qin; Maryann C. Tung; Emma Belliveau; Shuhan Liu; Jimin Kwon; Wei-Chen Chen; Zizhen Jiang; S. Simon Wong; H.-S. Philip Wong (VLSI Technology and Circuits, 2022)

First Experimental Demonstration of Hybrid Gain Cell Memory with Si PMOS and ITO FET for High-speed On-chip Memory. - Shuhan Liu; Shengjun Qin; Koustav Jana; Jian Chen; Kasidit Toprasertpong; H.-S. Philip Wong (VLSI Technology and Circuits, 2024)

Integrating Spatial Self-Attention and Convolution Networks for Improved Car-Sharing Demand Forecasting. - Shengjun Qin; Jiaying Qin; Zhi Liu (IEEE Access, 2024)