In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement. - Shi Pu 005; Enes Ugur; Fei Yang 006; Bilal Akin (IEEE Trans. Ind. Electron., 2020)

A New Complete Condition Monitoring Method for SiC Power MOSFETs. - Enes Ugur; Chi Xu; Fei Yang 006; Shi Pu 005; Bilal Akin (IEEE Trans. Ind. Electron., 2021)