Impact of within-wafer process variability on radiation response. - Zhiyuan Hu; Zhangli Liu; Hua Shao; Zhengxuan Zhang; Bingxu Ning; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. J., 2011)

The impact of total ionizing radiation on body effect. - Bingxu Ning; Zhiyuan Hu; Zhengxuan Zhang; Zhangli Liu; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. J., 2011)

Total ionizing dose effects in elementary devices for 180-nm flash technologies. - Zhiyuan Hu; Zhangli Liu; Hua Shao; Zhengxuan Zhang; Bingxu Ning; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. Reliab., 2011)

Comparison of TID response in core, input/output and high voltage transistors for flash memory. - Zhangli Liu; Zhiyuan Hu; Zhengxuan Zhang; Hua Shao; Ming Chen 007; Dawei Bi; Bingxu Ning; Shichang Zou (Microelectron. Reliab., 2011)

Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs. - Jianhua Zhou; Albert Pang; Steam Cao; Shichang Zou (Microelectron. Reliab., 2011)

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. - Bingxu Ning; Zhengxuan Zhang; Zhangli Liu; Zhiyuan Hu; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. Reliab., 2012)

A compact and CMOS compatible MMI coupler with very low excess loss. - Zhen Sheng; Zhiqi Wang; Chao Qiu; Le Li; Albert Pang; Aimin Wu; Xi Wang; Shichang Zou; Fuwan Gan (OFC/NFOEC, 2013)

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. - Bingxu Ning; Dawei Bi; Huixiang Huang; Zhengxuan Zhang; Ming Chen 007; Shichang Zou (Microelectron. J., 2013)

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. - Bingxu Ning; Dawei Bi; Huixiang Huang; Zhengxuan Zhang; Zhiyuan Hu; Ming Chen 007; Shichang Zou (Microelectron. Reliab., 2013)

A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory With a Sensing Current Protection Technique. - Shengbo Zhang; Jun Xiao; Guangjun Yang; Jian Hu; Mingyong Huang; Shichang Zou (IEEE Trans. Circuits Syst. I Regul. Pap., 2014)

A Novel Sourceline Voltage Compensation Circuit and a Wordline Voltage-Generating System for Embedded nor Flash Memory. - Shengbo Zhang; Jun Xiao; Guangjun Yang; Jian Hu; Shichang Zou (IEEE Trans. Circuits Syst. II Express Briefs, 2014)

Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology. - Yunlong Zheng; Ruofan Dai; Zhuojun Chen; Shulong Sun; Zheng Wang; Zehua Sang; Min Lin 005; Shichang Zou (IEICE Electron. Express, 2016)

A 0.5-V novel complementary current-reused CMOS LNA for 2.4 GHz medical application. - Ruofan Dai; Yunlong Zheng; Jun He; Guojun Liu; Weiran Kong; Shichang Zou (Microelectron. J., 2016)

Area-efficient charge pump with local boost technique for embedded flash memory. - Yiran Xu; Wenyi Zhu; Jun Xiao; Guangjun Yang; Jian Hu; Xiaoyun Li; Weiran Kong; Shichang Zou (IEICE Electron. Express, 2017)

A duplex current-reused CMOS LNA with complementary derivative superposition technique. - Ruofan Dai; Yunlong Zheng; Jun He; Weiran Kong; Shichang Zou (Int. J. Circuit Theory Appl., 2017)

A macro SPICE model for 2-bits/cell split-gate flash memory cell. - Xiaonian Liu; Yiran Xu; Xiangquan Fan; Mengxing Liao; Pingliang Li; Shichang Zou (Microelectron. J., 2017)

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs. - Lihua Dai; Xiaonian Liu; Mengying Zhang; Leqing Zhang; Zhiyuan Hu; Dawei Bi; Zhengxuan Zhang; Shichang Zou (Microelectron. Reliab., 2017)

Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology. - Lei Song; Zhiyuan Hu; Mengying Zhang; Xiaonian Liu; Lihua Dai; Zhengxuan Zhang; Shichang Zou (Microelectron. Reliab., 2017)

Investigation of read disturb in split-gate memory and its feasible solution. - Wenyi Zhu; Binghan Li; Tao Yu; Weiran Kong; Shichang Zou (Microelectron. Reliab., 2017)

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide. - Zhiyuan Hu; Lihua Dai; Zhengxuan Zhang; Xiaoyun Li; Shichang Zou (IEICE Electron. Express, 2018)

A novel SEU tolerant memory cell for space applications. - Dianpeng Lin; Yiran Xu; Xiaoyun Li; Xin Xie; Jianwei Jiang 001; Jiangchuan Ren; Huilong Zhu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2018)

A novel self-recoverable and triple nodes upset resilience DICE latch. - Dianpeng Lin; Yiran Xu; Xiaoyun Li; Xin Xie; Jianwei Jiang 001; Jiangchuan Ren; Huilong Zhu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2018)

A novel highly reliable and low-power radiation hardened SRAM bit-cell design. - Dianpeng Lin; Yiran Xu; Xiaonian Liu; Wenyi Zhu; Lihua Dai; Mengying Zhang; Xiaoyun Li; Xin Xie; Jianwei Jiang 001; Huilong Zhu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2018)

Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device. - Zhaozhao Xu; Donghua Liu; Wei Xiong; Jun Hu; Wenting Duan; Hualun Chen; Wensheng Qian; Weiran Kong; Shichang Zou (Microelectron. Reliab., 2018)

A 280-KBytes Twin-Bit-Cell Embedded NOR Flash Memory With a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems. - Yiran Xu; Wenyi Zhu; Jun Xiao; Guangjun Yang; Jian Hu; Shengbo Zhang; Mingyong Huang; Weiran Kong; Shichang Zou (IEEE Trans. Circuits Syst. II Express Briefs, 2018)

Soft-Error-Tolerant Ultralow-Leakage 12T SRAM Bitcell Design. - Jianwei Jiang 001; Dianpeng Lin; Jun Xiao; Shichang Zou (ICICDT, 2019)

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. - Xin Xie; Huilong Zhu; Mengying Zhang; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2019)

A charge pump system with new regulation and clocking scheme. - Wenyi Zhu; Jianwei Jiang 001; Dianpeng Lin; Jun Xiao; Guangjun Yang; Xiaoyun Li; Shichang Zou (IEICE Electron. Express, 2019)

Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS. - Zhaozhao Xu; Donghua Liu; Jun Hu; Feng Jin; Xinjie Yang; Wenting Duan; Wei Yue; Ziquan Fang; Wensheng Qian; Weiran Kong; Shichang Zou (Microelectron. J., 2019)

Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications. - Jianwei Jiang 001; Yiran Xu; Wenyi Zhu; Jun Xiao; Shichang Zou (IEEE Trans. Circuits Syst. I Regul. Pap., 2019)

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. - Huilong Zhu; Dawei Bi; Xin Xie; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2020)

Electrical performance of 130 nm PD-SOI MOSFET with diamond layout. - Xiaonian Liu; Lihua Dai; Pingliang Li; Shichang Zou (Microelectron. J., 2020)

A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory. - Wenyi Zhu; Jianwei Jiang 001; Haineng Zhang; Yiran Xu; Jun Xiao; Guangjun Yang; Shichang Zou (IEEE Trans. Circuits Syst. II Express Briefs, 2020)

A High-Performance and Low-Cost Single-Event Multiple-Node-Upsets Resilient Latch Design. - Zhongyang Liu; Haineng Zhang; Jianwei Jiang 001; Yanjie Jia; Yuqiao Xie; Shichang Zou; Zhengxuan Zhang (IEEE Trans. Very Large Scale Integr. Syst., 2022)

A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application. - Zhongyang Liu; Yuqiao Xie; Tao Xu; Qing Liu; Dawei Bi; Zhiyuan Hu; Shichang Zou; Zhengxuan Zhang (Int. J. Circuit Theory Appl., 2023)

A novel high-precision single-event transient hardened voltage comparator design. - Yuqiao Xie; Zhongyang Liu; Tao Xu; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (Int. J. Circuit Theory Appl., 2023)

High-precision single-event transient hardened comparator with the sensitive node transient detection feedback latch technique. - Yuqiao Xie; Tao Xu; Zhongyang Liu; Guoji Qiu; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (Int. J. Circuit Theory Appl., 2025)