ETX: A Flexible Simulation Framework for Design of Transactive Energy Systems. - Shida Zhang; Daniel C. May; Peter Atrazhev; Mustafa Gül; Andrew Leach; Tim Weis; Petr Musílek (CCECE, 2019)

A Dynamic Equivalent Model for DFIG-Based Wind Farms. - Mingyang Liu 002; Wenxia Pan; Yibo Zhang; Kun Zhao 006; Shida Zhang; Tongchui Liu (IEEE Access, 2019)

Analysis of the Effect of Hot Carrier Injection in An Integrated Inductive Voltage Regulator. - Shida Zhang; Nael Mizanur Rahman; Venkata Chaitanya Krishna Chekuri; Carlos Tokunaga; Saibal Mukhopadhyay (ISLPED, 2022)

Measurement of Aging Effect on an Analog Computing-In-Memory Macro in 28nm CMOS. - Wei Chun Wang; Shida Zhang; Sudarshan Sharma; Minah Lee; Saibal Mukhopadhyay (IRPS, 2024)

Measurement of Aging Effect in a Digitally Controlled Inductive Voltage Regulator in 65nm. - Shida Zhang; Nael Mizanur Rahman; Wei Chun Wang; Narasimha Vasishta Kidambi; Carlos Tokunaga; Saibal Mukhopadhyay (IRPS, 2024)

Cryogenic Operation of Computing-In-Memory based Spiking Neural Network. - Laith A. Shamieh; Wei-Chun Wang; Shida Zhang; Rakshith Saligram; Amol D. Gaidhane; Yu Cao 001; Arijit Raychowdhury; Suman Datta; Saibal Mukhopadhyay (ISLPED, 2024)

Analog In-Memory-Compute with Multi-bit Silicon Ferro FinFET Array for Improved Energy and Area Efficiency. - Eknath Sarkar; Dyutimoy Chakraborty; Wei-Chun Wang; Khandker Akif Aabrar; Sharadindu Gopal Kirtania; Omkar Phadke; Chengyang Zhang; Emmanuel Quezada; Jaewon Shin; Shida Zhang; Asif Islam Khan; Shimeng Yu; et al. (IMW, 2025)

A Comparative Analysis of Aging Effects on Computing-in-Memory Systems in 28nm CMOS. - Shida Zhang; Wei-Chun Wang; Carlos Tokunaga; Saibal Mukhopadhyay (IRPS, 2025)

A simulation study of SiC trench JFET with embedded diode for performance improvement. - Shida Zhang; Xintian Zhou; Yun Tang; Yunpeng Jia; Dongqing Hu; Yu Wu 015; Yuanfu Zhao (Microelectron. J., 2025)

Optimized Modulation for Single-Stage Dual-Active-Bridge AC-DC Converter Under Wide Voltage Range. - Yaoqiang Wang; Wuqing Yan; Shida Zhang; Fuquan Nie; Jun Liang 001 (IEEE Trans. Ind. Electron., 2025)