A 7 ns 1 Mb BiCMOS ECL SRAM with shift redundancy. - Atsushi Ohba; Shigeki Ohbayashi; Toru Shiomi; Satoshi Takano; Kenji Anami; Hiroki Honda; Yoshiyuki Ishigaki; Masahiro Hatanaka; Shigeo Nagao; Shimpei Kayano (IEEE J. Solid State Circuits, 1991)

A 5.8-ns 256-Kb BiCMOS TTL SRAM with T-Shaped bit line architecture. - Toru Shiomi; Tomohisa Wada; Shigeki Ohbayashi; Atsushi Ohba; Hiroki Honda; Yoshiyuki Ishigaki; Shiro Hine; Kenji Anami; Kimio Suzuki; Tadashi Sumi (IEEE J. Solid State Circuits, 1993)

A 500-MHz pipelined burst SRAM with improved SER immunity. - Hirotoshi Sato; Tomohisa Wada; Shigeki Ohbayashi; Kunihiko Kozaru; Yasuyuki Okamoto; Yoshiko Higashide; Tadayuki Shimizu; Yukio Maki; Rui Morimoto; Hisakazu Otoi; Tsuyoshi Koga; Hiroki Honda; et al. (IEEE J. Solid State Circuits, 1999)

Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. - Yasumasa Tsukamoto; Koji Nii; Susumu Imaoka; Yuji Oda; Shigeki Ohbayashi; Tomoaki Yoshizawa; Hiroshi Makino; Koichiro Ishibashi; Hirofumi Shinohara (ICCAD, 2005)

A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die. - Shigeki Ohbayashi; Makoto Yabuuchi; Kazushi Kono; Yuji Oda; Susumu Imaoka; Keiichi Usui; Toshiaki Yonezu; Takeshi Iwamoto; Koji Nii; Yasumasa Tsukamoto; Masashi Arakawa; Takahiro Uchida; et al. (ISSCC, 2007)

A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations. - Makoto Yabuuchi; Koji Nii; Yasumasa Tsukamoto; Shigeki Ohbayashi; Susumu Imaoka; Hiroshi Makino; Yoshinobu Yamagami; Satoshi Ishikura; Toshio Terano; Toshiyuki Oashi; Keiji Hashimoto; Akio Sebe; et al. (ISSCC, 2007)

A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits. - Shigeki Ohbayashi; Makoto Yabuuchi; Koji Nii; Yasumasa Tsukamoto; Susumu Imaoka; Yuji Oda; Tsutomu Yoshihara; Motoshige Igarashi; Masahiko Takeuchi; Hiroshi Kawashima; Yasuo Yamaguchi; Kazuhiro Tsukamoto; et al. (IEEE J. Solid State Circuits, 2007)

A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology. - Masako Fujii; Koji Nii; Hiroshi Makino; Shigeki Ohbayashi; Motoshige Igarashi; Takeshi Kawamura; Miho Yokota; Nobuhiro Tsuda; Tomoaki Yoshizawa; Toshikazu Tsutsui; Naohiko Takeshita; Naofumi Murata; et al. (IEICE Trans. Electron., 2008)

A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues. - Satoshi Ishikura; Marefusa Kurumada; Toshio Terano; Yoshinobu Yamagami; Naoki Kotani; Katsuji Satomi; Koji Nii; Makoto Yabuuchi; Yasumasa Tsukamoto; Shigeki Ohbayashi; Toshiyuki Oashi; Hiroshi Makino; et al. (IEEE J. Solid State Circuits, 2008)

A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations. - Koji Nii; Makoto Yabuuchi; Yasumasa Tsukamoto; Shigeki Ohbayashi; Susumu Imaoka; Hiroshi Makino; Yoshinobu Yamagami; Satoshi Ishikura; Toshio Terano; Toshiyuki Oashi; Keiji Hashimoto; Akio Sebe; et al. (IEEE J. Solid State Circuits, 2008)

A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die. - Shigeki Ohbayashi; Makoto Yabuuchi; Kazushi Kono; Yuji Oda; Susumu Imaoka; Keiichi Usui; Toshiaki Yonezu; Takeshi Iwamoto; Koji Nii; Yasumasa Tsukamoto; Masashi Arakawa; Takahiro Uchida; et al. (IEEE J. Solid State Circuits, 2008)

Synchronous Ultra-High-Density 2RW Dual-Port 8T-SRAM With Circumvention of Simultaneous Common-Row-Access. - Koji Nii; Yasumasa Tsukamoto; Makoto Yabuuchi; Yasuhiro Masuda; Susumu Imaoka; Keiichi Usui; Shigeki Ohbayashi; Hiroshi Makino; Hirofumi Shinohara (IEEE J. Solid State Circuits, 2009)

A yield improvement methodology based on logic redundant repair with a repairable scan flip-flop designed by push rule. - Masanori Kurimoto; Jun Matsushima; Shigeki Ohbayashi; Yoshiaki Fukui (ISQED, 2010)

A Yield and Reliability Improvement Methodology Based on Logic Redundant Repair with a Repairable Scan Flip-Flop Designed by Push Rule. - Masanori Kurimoto; Jun Matsushima; Shigeki Ohbayashi; Yoshiaki Fukui; Michio Komoda; Nobuhiro Tsuda (ACM Trans. Design Autom. Electr. Syst., 2012)