Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing. - Umesh Chand; Mohamed M. Sabry Aly; Manohar Lal; Chen Chun-Kuei; Sonu Hooda; Shih-Hao Tsai; Zihang Fang; Hasita Veluri; Aaron Voon-Yew Thean (VLSI Technology and Circuits, 2022)

Overcoming Negative nFET VTH by Defect-Compensated Low-Thermal Budget ITO-IGZO Hetero-Oxide Channel to Achieve Record Mobility and Enhancement-mode Operation. - Sonu Hooda; Chun-Kuei Chen; Manohar Lal; Shih-Hao Tsai; Evgeny Zamburg; Aaron Voon-Yew Thean (VLSI Technology and Circuits, 2023)