Atomic-layer-deposited silicon-nitride/SiO2 stack–a highly potential gate dielectrics for advanced CMOS technology. - Anri Nakajima; Quazi D. M. Khosru; Takashi Yoshimoto; Shin Yokoyama (Microelectron. Reliab., 2002)

Evaluation of the Impact of Selfish Nodes in Ad Hoc Networks and Detection and Countermeasure Methods. - Shin Yokoyama; Yoshikazu Nakane; Osamu Takahashi; Eiichi Miyamoto (MDM, 2006)

Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain. - Naoto Matsuo; Atsushi Fukushima; Kensaku Ohkura; Akira Heya; Shin Yokoyama (IEICE Electron. Express, 2007)

Study of charge retention mechanism for DNA memory FET. - Shoko Maeno; Naoto Matsuo; Shohei Nakamura; Akira Heya; Tadao Takada; Kazushige Yamana; Masataka Fukuyama; Shin Yokoyama (IEICE Electron. Express, 2014)

Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film. - Takahiro Kobayashi; Naoto Matsuo; Akira Heya; Shin Yokoyama (IEICE Trans. Electron., 2014)

Effect of Anti-Reflective Coating for Si Optical Resonator Biosensors. - Jun Maeda; Riku Funamoto; Yoshiteru Amemiya; Shin Yokoyama (ISDCS, 2019)

Heterogeneous integration of GaN device layer by epitaxial film bonding. - Mitsuhiko Ogihara; Shin Yokoyama; Yoshiteru Amemiya (ISDCS, 2019)

Response Characteristics of Optical Waveguides Containing Diarylethene : * Note: Sub-titles are not captured in Xplore and should not be used. - Keisuke Tanimoto; Yoshiteru Amemiya; Shin Yokoyama (ISDCS, 2019)

Hybrid Integration of Photonic Devices and CMOS Amplifiers. - Taichi Uruma; Tetsuo Tabei; Shin Yokoyama; Yoshiteru Amemiya; Tadashi Sato; Shinji Yamada; Kazushi Okada (ISDCS, 2019)