Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing. - Yiming Lei; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Masayuki Furuhashi; Shingo Tomohisa; Satoshi Yamakawa; Kuniyuki Kakushima (Microelectron. Reliab., 2018)

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors. - Yiming Lei; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Masayuki Furuhashi; Shingo Tomohisa; Satoshi Yamakawa; Kuniyuki Kakushima (Microelectron. Reliab., 2018)