Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-based ReRAM. - Kazuki Maeda; Shinpei Matsuda; Ken Takeuchi; Ryutaro Yasuhara (ESSDERC, 2018)

Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM. - Shouhei Fukuyama; Kazuki Maeda; Shinpei Matsuda; Ken Takeuchi; Ryutaro Yasuhara (IRPS, 2018)

Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. - Shouhei Fukuyama; Shinpei Matsuda; Ryutaro Yasuhara; Ken Takeuchi (NVMTS, 2018)

Maximizing Peformance/cost Figure of Merit of Storage-type SCM based SSD by Adding Small Capacity of Memory-type SCM. - Reika Kinoshita; Chihiro Matsui; Shinpei Matsuda; Yutaka Adachi; Ken Takeuchi (NVMTS, 2018)

Comprehensive Analysis of Data-Retention and Endurance Trade-Off of 40nm TaOx-based ReRAM. - Shouhei Fukuyama; Atsuna Hayakawa; Ryutaro Yasuhara; Shinpei Matsuda; Hiroshi Kinoshita; Ken Takeuchi (IRPS, 2019)