Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz. - Shinpei Yamashita; Michihiko Suhara; Kenichi Kawaguchi; Tsuyoshi Takahashi; Masaru Sato 001; Naoya Okamoto; Kiyoto Asakawa (IEICE Trans. Electron., 2019)