Investigation of Sub-20nm 4th generation DRAM cell transistor's parasitic resistance and scalable methodology for Sub-20nm era. - Shinwoo Jeong; Jin-Seong Lee; Jiuk Jang; Jooncheol Kim; Hyunsu Shin; Jihun Kim; Jeongwoo Song; Dongsoo Woo; Jeonghoon Oh; Jooyoung Lee (IRPS, 2023)

14nm DRAM Development and Manufacturing. - Kanguk Kim; Youngwoo Son; Hoin Ryu; Byunghyun Lee; Jooncheol Kim; Hyunsu Shin; Joonyoung Kang; Jihun Kim; Shinwoo Jeong; Kyosuk Chae; Dongkak Lee; Ilwoo Jung; et al. (VLSI Technology and Circuits, 2023)

Single Metal BCAT Breakthrough to Open a New Era of 12 nm DRAM and Beyond. - Kyosuk Chae; Taiuk Rim; Youngwoo Son; Heejae Choi; Jin-Seong Lee; Shinwoo Jeong; Jieun Lee; Dongin Lee; Byunghyun Lee; Dongsoo Woo; Seguen Park; Sangjun Hwang (VLSI Technology and Circuits, 2024)