Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. - Qingyun Xie; Mengyang Yuan; John Niroula; Bejoy Sikder; Shisong Luo; Kai Fu; Nitul S. Rajput; Ayan Biswas Pranta; Pradyot Yadav; Yuji Zhao; Nadim Chowdhury; Tomás Palacios (VLSI Technology and Circuits, 2023)

GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. - Shisong Luo; Cheng Chang; Qingyun Xie; Tao Li; Mingfei Xu; Ziyi He; Tomás Palacios; Yuji Zhao (DRC, 2024)

Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. - John Niroula; Matthew A. Taylor; Qingyun Xie; Pradyot Yadav; Shisong Luo; Yuji Zhao; Tomás Palacios (DRC, 2024)