Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor. - Deepak Soni; Dheeraj Sharma; Shivendra Yadav; Mohd. Aslam; Dharmendra Singh Yadav; Neeraj Sharma (iNIS, 2017)

GaAs-SiGe Based Novel Device Structure of Doping Less Tunnel FET. - Shivendra Yadav; Chithraja Rajan; Dheeraj Sharma; Sanjay Balotiya (VDAT, 2019)

Performance improvement of nano wire TFET by hetero-dielectric and hetero-material: At device and circuit level. - Jyoti Patel; Dheeraj Sharma; Shivendra Yadav; Alemienla Lemtur; Priyanka Suman (Microelectron. J., 2019)

Quantum Tunnelling and Themonic Emission, Transistor Simulation. - Shivendra Yadav; Deepak Joshi; Sanjib Kalita; Tushita Singh (VDAT, 2022)

Impact of S/D Extension Length and Sheet Stacking on Transient Behavior of Nanosheet FETs. - Shobhit Srivastava; Sachin Doge; Sourabh Panwar; Shashidhara M; Vivek Garg; Shivendra Yadav; Lomash Chandra; Abhishek Acharya (ISCAS, 2024)

Passive Voltage Amplification in FE-FE-DE Heterostructure. - Bhaskar Awadhiya; Sameer Yadav; Yashwanth Nanjappa; Abhishek Pahuja; Shivendra Yadav; Sachin Agrawal (IEEE Access, 2024)