7.5 A 3.3ns-access-time 71.2μW/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture. - Hiroki Noguchi; Kazutaka Ikegami; Keiichi Kushida; Keiko Abe; Shogo Itai; Satoshi Takaya; Naoharu Shimomura; Junichi Ito; Atsushi Kawasumi; Hiroyuki Hara; Shinobu Fujita (ISSCC, 2015)

Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications. - Li Zhang 033; Mitsuo Koike; Mizuki Ono; Shogo Itai; Kazuya Matsuzawa; Syotaro Ono; Wataru Saito; Masakazu Yamaguchi; Yohei Hayase; Keiryo Hara (Microelectron. Reliab., 2015)

Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM. - Rina Takashima; Takeo Koike; Shogo Itai; Hideyuki Sugiyama; Young Min Lee; Masaru Toko; Soichiro Ono; Daisuke Watanabe; Soichi Oikawa; Katsuhiko Koi; Hiroyuki Kanaya; Masahiko Nakayama; et al. (IRPS, 2024)