Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI. - Masumi Saitoh; Shosuke Fujii; Minoru Oda; Marina Yamaguchi; Shoichi Kabuyanagi; Yoko Yoshimura; Kensuke Ota; Kiwamu Sakuma; Yuuichi Kamimuta (ESSDERC, 2018)

Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory. - Marina Yamaguchi; Shosuke Fujii; Yuuichi Kamimuta; Shoichi Kabuyanagi; Tsunehiro Ino; Yasushi Nakasaki; Riichiro Takaishi; Reika Ichihara; Masumi Saitoh (IRPS, 2018)

Modeling and spectroscopy of ovonic threshold switching defects. - Robin Degraeve; Taras Ravsher; Shoichi Kabuyanagi; Andrea Fantini; Sergiu Clima; Daniele Garbin; Gouri Sankar Kar (IRPS, 2021)

A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory. - Shoichi Kabuyanagi; Takamasa Hamai; Masayuki Murase; Takeru Maeda; Masumi Saitoh; Shosuke Fujii (VLSI Technology and Circuits, 2024)