Submillimeter-wave InP HEMT amplifiers with current-reuse topology. - Masaru Sato 001; Shoichi Shiba; Hiroshi Matsumura; Tsuyoshi Takahashi; Toshihide Suzuki; Yasuhiro Nakasha; Naoki Hara (RWS, 2013)

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. - Shoichi Shiba; Masaru Sato 001; Hiroshi Matsumura; Yoichi Kawano; Tsuyoshi Takahashi; Toshihide Suzuki; Yasuhiro Nakasha; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2015)

300-GHz Amplifier in 75-nm InP HEMT Technology. - Hiroshi Matsumura; Yoichi Kawano; Shoichi Shiba; Masaru Sato 001; Toshihide Suzuki; Yasuhiro Nakasha; Tsuyoshi Takahashi; Kozo Makiyama; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2016)

A 9.3% PAE, 9.2-dBm POUT power amplifier and -1.9-dB Gc upconverting mixer using InP-based MOS HEMTs for 300-GHz phased-array transmitters. - Yasuhiro Nakasha; Shiro Ozaki; Yusuke Kumazaki; Naoya Okamoto; Shoichi Shiba; Masaru Sato 001; Naoki Hara; Toshihiro Ohki (IEICE Electron. Express, 2025)