Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI. - Masumi Saitoh; Shosuke Fujii; Minoru Oda; Marina Yamaguchi; Shoichi Kabuyanagi; Yoko Yoshimura; Kensuke Ota; Kiwamu Sakuma; Yuuichi Kamimuta (ESSDERC, 2018)

Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory. - Marina Yamaguchi; Shosuke Fujii; Yuuichi Kamimuta; Shoichi Kabuyanagi; Tsunehiro Ino; Yasushi Nakasaki; Riichiro Takaishi; Reika Ichihara; Masumi Saitoh (IRPS, 2018)

Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication. - Shosuke Fujii; Reika Ichihara; Takuya Konno; Marina Yamaguchi; Harumi Seki; Hiroki Tanaka; Dandan Zhao; Yoko Yoshimura; Masumi Saitoh; Masato Koyama (VLSI Circuits, 2019)

Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning. - Marina Yamaguchi; Shosuke Fujii; Kensuke Ota; Masumi Saitoh (IRPS, 2020)

One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond. - Yuya Matsuzawa; Yuki Ohnishi; Kazuhiro Katono; Yusuke Muto; Takayuki Tsukagoshi; Hiroki Tokuhira; Kei Sakamoto; Hisakazu Matsumori; Hiroyuki Ode; Shosuke Fujii; Hide Tanaka; Takeshi Fujimaki (ESSDERC, 2023)

Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. - Takamasa Hamai; Kunifumi Suzuki; Reika Ichihara; Yusuke Higashi; Yoko Yoshimura; Kiwamu Sakuma; Kensuke Ota; Kota Takahashi; Kazuhiro Matsuo; Shosuke Fujii; Masumi Saitoh (IRPS, 2023)

A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory. - Shoichi Kabuyanagi; Takamasa Hamai; Masayuki Murase; Takeru Maeda; Masumi Saitoh; Shosuke Fujii (VLSI Technology and Circuits, 2024)