Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM. - Shouhei Fukuyama; Kazuki Maeda; Shinpei Matsuda; Ken Takeuchi; Ryutaro Yasuhara (IRPS, 2018)

Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. - Shouhei Fukuyama; Shinpei Matsuda; Ryutaro Yasuhara; Ken Takeuchi (NVMTS, 2018)

Comprehensive Analysis of Data-Retention and Endurance Trade-Off of 40nm TaOx-based ReRAM. - Shouhei Fukuyama; Atsuna Hayakawa; Ryutaro Yasuhara; Shinpei Matsuda; Hiroshi Kinoshita; Ken Takeuchi (IRPS, 2019)

Workload-aware Data-eviction Self-adjusting System of Multi-SCM Storage to Resolve Trade-off between SCM Data-retention Error and Storage System Performance. - Reika Kinoshita; Chihiro Matsui; Atsuya Suzuki; Shouhei Fukuyama; Ken Takeuchi (ASP-DAC, 2020)