20.8 Gb/s GaAs LSI self-routing switch for ATM switching systems. - Hiroyuki Yamada; Masanori Tsunotani; Fumiyasu Kaneyama; Shouhei Seki (IEEE J. Solid State Circuits, 1997)

Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs. - Shinichi Hoshi; Toshiharu Marui; Masanori Itoh; Yoshiaki Sano; Shouhei Seki (IEICE Trans. Electron., 2006)

Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs. - Toshiharu Marui; Shinichi Hoshi; Masanori Itoh; Isao Tamai; Fumihiko Toda; Hideyuki Okita; Yoshiaki Sano; Shouhei Seki (IEICE Trans. Electron., 2008)

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate. - Hideyuki Okita; Toshiharu Marui; Shinichi Hoshi; Masanori Itoh; Fumihiko Toda; Yoshiaki Morino; Isao Tamai; Yoshiaki Sano; Shouhei Seki (IEICE Trans. Electron., 2009)