Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology. - Jizuo Zhang; Jianjun Chen; Pengcheng Huang 003; Shouping Li; Liang Fang (Microelectron. Reliab., 2018)

The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. - Jizuo Zhang; Jianjun Chen; Pengcheng Huang; Shouping Li; Liang Fang (Symmetry, 2019)

Low Power SAR ADC Design with Digital Background Calibration Algorithm. - Shouping Li; Jianjun Chen; Bin Liang; Yang Guo (Symmetry, 2020)

A 12-bit 30 MS/s Successive Approximation-Register Analog-to-Digital Converter with Foreground Digital Calibration Algorithm. - Shouping Li; Yang Guo; Jianjun Chen; Bin Liang (Symmetry, 2020)