Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor. - Hiroki Inoue; Takanori Matsuzaki; Shuhei Nagatsuka; Yutaka Okazaki; Toshinari Sasaki; Kousei Noda; Daisuke Matsubayashi; Takahiko Ishizu; Tatsuya Onuki; Atsuo Isobe; Yutaka Shionoiri; Kiyoshi Kato; et al. (IEEE J. Solid State Circuits, 2012)

16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method. - Takanori Matsuzaki; Tatsuya Onuki; Shuhei Nagatsuka; Hiroki Inoue; Takahiko Ishizu; Yoshinori Ieda; Naoto Yamade; Hidekazu Miyairi; Masayuki Sakakura; Tomoaki Atsumi; Yutaka Shionoiri; Kiyoshi Kato; et al. (ISSCC, 2015)