A 30-ns 64-Mb DRAM with built-in self-test and self-repair function. - Akira Tanabe; Toshio Takeshima; Hiroki Koike; Yoshiharu Aimoto; Masahide Takada; Toshiyuki Ishijima; Naoki Kasai; Hiromitsu Hada; Kentaro Shibahara; Takemitsu Kunio; Takaho Tanigawa; Takanori Saeki; et al. (IEEE J. Solid State Circuits, 1992)

A 1-Gb DRAM for file applications. - Tadahiko Sugibayashi; Isao Naritake; Satoshi Utsugi; Kentaro Shibahara; Ryuichi Oikawa; Hidemitsu Mori; Shouichi Iwao; Tatsunori Murotani; Kuniaki Koyama; Shinichi Fukuzawa; Toshiro Itani; Kunihiko Kasama; et al. (IEEE J. Solid State Circuits, 1995)

A 98 mm2 die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell. - Masayoshi Ohkawa; Hiroshi Sugawara; Naoaki Sudo; Masaru Tsukiji; Ken-ichiro Nakagawa; Masato Kawata; Ken-ichi Oyama; Toshio Takeshima; Shuichi Ohya (IEEE J. Solid State Circuits, 1996)