Anti-ESD impacts on 60-V P-channel LDMOS devices as none-ODs zone inserting in the bulk region. - Shen-Li Chen; Shawn Chang; Yu-Ting Huang 007; Shun-Bao Chang (ICCE-TW, 2015)

ESD reliability building in 0.25 μm 60-V p-channel LDMOS DUTs with different embedded SCRs. - Shen-Li Chen; Yu-Ting Huang 007; Shawn Chang; Shun-Bao Chang (ICCE-TW, 2015)