Silicon integrated circuit technology from past to future. - Hiroshi Iwai; Shun'ichiro Ohmi (Microelectron. Reliab., 2002)

Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications. - Takashi Yamazaki; Shun'ichiro Ohmi; Shinya Morita; Hiroyuki Ohri; Junichi Murota; Masao Sakuraba; Hiroo Omi; Tetsushi Sakai (IEICE Trans. Electron., 2005)

Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. - Yongshik Kim; Kunihiro Miyauchi; Shun'ichiro Ohmi; Kazuo Tsutsui; Hiroshi Iwai (Microelectron. J., 2005)

Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films. - Shun'ichiro Ohmi; Tomoki Kurose; Masaki Satoh (IEICE Trans. Electron., 2006)

A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels. - Shun'ichiro Ohmi; Tetsushi Sakai (IEICE Trans. Electron., 2007)

A study on precise control of PtSi work function by alloying with Hf. - Jun Gao; Jumpei Ishikawa; Shun'ichiro Ohmi (IEICE Electron. Express, 2011)

Work function modulation of PtSi by alloying with Yb. - Jumpei Ishikawa; Jun Gao; Shun'ichiro Ohmi (IEICE Electron. Express, 2011)

Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator. - Min Liao; Hiroshi Ishiwara; Shun'ichiro Ohmi (IEICE Electron. Express, 2011)

Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor. - Shun'ichiro Ohmi; Jun Gao (IEICE Electron. Express, 2011)

Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations. - Takahiro Sano; Shun'ichiro Ohmi (IEICE Electron. Express, 2011)

Modulation of PtSi Work Function by Alloying with Low Work Function Metal. - Jun Gao; Jumpei Ishikawa; Shun'ichiro Ohmi (IEICE Trans. Electron., 2011)

Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer. - Young-Uk Song; Hiroshi Ishiwara; Shun'ichiro Ohmi (IEICE Trans. Electron., 2011)

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering. - Huiseong Han; Shun'ichiro Ohmi (IEICE Electron. Express, 2012)

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors. - Min Liao; Hiroshi Ishiwara; Shun'ichiro Ohmi (IEICE Trans. Electron., 2012)

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering. - Dae-Hee Han; Huiseong Han; Shun'ichiro Ohmi (IEICE Electron. Express, 2013)

Contact resistivity reduction for PtSi/Si(100) by dopant segregation process. - Shun'ichiro Ohmi; Jun Arima (IEICE Electron. Express, 2013)

Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation. - Dae-Hee Han; Shun'ichiro Ohmi (IEICE Trans. Electron., 2013)

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system. - Shun'ichiro Ohmi (IEICE Electron. Express, 2014)

Experimental demonstration of a ferroelectric FET using paper substrate. - Changhwan Shin; Gwang-Geun Lee; Dae-Hee Han; Seung-Pil Han; Eisuke Tokumitsu; Shun'ichiro Ohmi; Dong-Joo Kim; Hiroshi Ishiwara; Minseo Park; Seung-Hyun Kim; Wan-Gyu Lee; Yun Jeong Hwang; et al. (IEICE Electron. Express, 2014)

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering. - Dae-Hee Han; Shun'ichiro Ohmi; Tomoyuki Suwa; Philippe Gaubert; Tadahiro Ohmi (IEICE Trans. Electron., 2014)

In-situ formation of Hf-based MONOS structures for non-volatile memory applications. - Shun'ichiro Ohmi; Yeyuan Liu (IEICE Electron. Express, 2015)

A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics. - Sohya Kudoh; Shun'ichiro Ohmi (IEICE Trans. Electron., 2015)

Investigation of bilayer HfNx gate insulator utilizing ECR plasma sputtering. - Nithi Atthi; Shun'ichiro Ohmi (IEICE Electron. Express, 2016)

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics. - Sohya Kudoh; Shun'ichiro Ohmi (IEICE Trans. Electron., 2016)

High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer. - Yasutaka Maeda; Shun'ichiro Ohmi; Tetsuya Goto; Tadahiro Ohmi (IEICE Trans. Electron., 2016)

PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity. - Shun'ichiro Ohmi; Mengyi Chen; Xiaopeng Wu; Yasushi Masahiro (IEICE Trans. Electron., 2016)

Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET. - Yasutaka Maeda; Shun'ichiro Ohmi; Tetsuya Goto; Tadahiro Ohmi (IEICE Trans. Electron., 2017)

PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures. - Shun'ichiro Ohmi; Mengyi Chen; Weiguang Zuo; Yasushi Masahiro (IEICE Trans. Electron., 2017)

Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory. - Sohya Kudoh; Shun'ichiro Ohmi (DRC, 2018)

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient. - Sohya Kudoh; Shun'ichiro Ohmi (IEICE Trans. Electron., 2018)

Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes. - Yasutaka Maeda; Mizuha Hiroki; Shun'ichiro Ohmi (IEICE Trans. Electron., 2018)

PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process. - Shun'ichiro Ohmi; Yuya Tsukamoto; Weiguang Zuo; Yasushi Masahiro (IEICE Trans. Electron., 2018)

Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization. - Shun'ichiro Ohmi; Yizhe Ding; Sohya Kudoh (DRC, 2019)

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100). - Min Gee Kim; Shun'ichiro Ohmi (IEICE Trans. Electron., 2019)

Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process. - Rengie Mark D. Mailig; Shun'ichiro Ohmi (IEICE Trans. Electron., 2019)

AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs. - Shun'ichiro Ohmi; Mizuha Hiroki; Yasutaka Maeda (IEICE Trans. Electron., 2019)

Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process. - Shun'ichiro Ohmi; Yuya Tsukamoto; Rengie Mark D. Mailig (IEICE Trans. Electron., 2019)

The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation. - Binjian Zeng; Jiajia Liao; Qiangxiang Peng; Min Liao; Yichun Zhou; Shun'ichiro Ohmi (IEICE Trans. Electron., 2019)

Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. - Shun'ichiro Ohmi; Min Gee Kim; Masakazu Kataoka; Masaki Hayashi; Rengie Mark D. Mailig (DRC, 2020)

High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. - Kyung Eun Park; Shun'ichiro Ohmi (DRC, 2020)

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes. - Min Gee Kim; Masakazu Kataoka; Rengie Mark D. Mailig; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)

The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process. - Rengie Mark D. Mailig; Min Gee Kim; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)

In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering. - Shun'ichiro Ohmi; Shin Ishimatsu; Yuske Horiuchi; Sohya Kudoh (IEICE Trans. Electron., 2020)

The Influence of High-Temperature Sputtering on the N-Doped LaB6 Thin Film Formation Utilizing RF Sputtering. - Kyung Eun Park; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)

Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications. - Shun'ichiro Ohmi; Hiroki Morita; Masaki Hayashi; Akio Ihara; Jooyoung Pyo (DRC, 2021)

MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator. - Joong-Won Shin; Masakazu Tanuma; Shun'ichiro Ohmi (DRC, 2021)

MFSFET with Ferroelectric HfN for Analog Memory Application. - Shun'ichiro Ohmi; Akio Ihara; Masakazu Tanuma; Jooyoung Pyo; Joong-Won Shin (DRC, 2022)

Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation. - Joong-Won Shin; Masakazu Tanuma; J. Pyo; Shun'ichiro Ohmi (DRC, 2022)

Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer. - Eun-Ki Hong; Kyung Eun Park; Shun'ichiro Ohmi (IEICE Trans. Electron., 2022)

MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition. - Joong-Won Shin; Masakazu Tanuma; Shun'ichiro Ohmi (IEICE Trans. Electron., 2022)

The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation. - Masakazu Tanuma; Joong-Won Shin; Shun'ichiro Ohmi (IEICE Trans. Electron., 2022)

Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition. - Shun'ichiro Ohmi; Masakazu Tanuma; Joong-Won Shin (DRC, 2023)

Foreword. - Shun'ichiro Ohmi (IEICE Trans. Electron., 2023)

Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application. - Joong-Won Shin; Masakazu Tanuma; Shun'ichiro Ohmi (IEICE Trans. Electron., 2023)

Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO2 Blocking Layer. - Shun'ichiro Ohmi (IEICE Trans. Electron., 2024)