A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. - Hideaki Kurata; Shunichi Saeki; Takashi Kobayashi 002; Yoshitaka Sasago; Tsuyoshi Arigane; Keiichi Yoshida; Yoshinori Takase; Takayuki Yoshitake; Osamu Tsuchiya; Yoshinori Ikeda; Shunichi Narumi; Michitaro Kanamitsu; et al. (IEICE Trans. Electron., 2006)

Random Telegraph Signal in Flash Memory: Its Impact on Scaling of Multilevel Flash Memory Beyond the 90-nm Node. - Hideaki Kurata; Kazuo Otsuga; Akira Kotabe; Shinya Kajiyama; Taro Osabe; Yoshitaka Sasago; Shunichi Narumi; Kenji Tokami; Shiro Kamohara; Osamu Tsuchiya (IEEE J. Solid State Circuits, 2007)