Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories. - Hideaki Kurata; Shunichi Saeki; Takashi Kobayashi 002; Yoshitaka Sasago; Tsuyoshi Arigane; Kazuo Otsuga; Takayuki Kawahara (IEEE J. Solid State Circuits, 2005)

A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. - Hideaki Kurata; Shunichi Saeki; Takashi Kobayashi 002; Yoshitaka Sasago; Tsuyoshi Arigane; Keiichi Yoshida; Yoshinori Takase; Takayuki Yoshitake; Osamu Tsuchiya; Yoshinori Ikeda; Shunichi Narumi; Michitaro Kanamitsu; et al. (IEICE Trans. Electron., 2006)