Bottom-up approach to silicon nanoelectronics. - Hiroshi Mizuta; Shunri Oda (Microelectron. J., 2008)

Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics. - Takamasa Kawanago; Ryo Ikoma; Du Wanjing; Shunri Oda (ESSDERC, 2016)

Quantum dot devices: Technology vehicles for nanoscale physics and paths for future applications. - Shunri Oda (ESSDERC, 2016)

Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET. - Takamasa Kawanago; Tomoaki Oba; Ryo Ikoma; Hiroyuki Takagi; Shunri Oda (ESSDERC, 2018)