A novel LDMOS with optimized electric field distribution to eliminate substrate assisted depletion effect. - Shunwei Zhu; Hujun Jia; Yintang Yang (Microelectron. J., 2022)

A novel high-performance trench lateral double-diffused MOSFET with buried oxide bump layer. - Hujun Jia; Yangyi Shen; Huan Wang; Xiaojie Wang; Yunfan Zhang; Shunwei Zhu; Yintang Yang (Microelectron. J., 2023)