16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current ( pA) Self-Selective Cells. - Yaxin Ding; Jianguo Yang; Yu Liu; Jianfeng Gao 005; Yuan Wang; Pengfei Jiang; Shuxian Lv; Yuting Chen; Boping Wang; Wei Wei; Tiancheng Gong; Kanhao Xue; et al. (VLSI Technology and Circuits, 2023)

Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. - Pengfei Jiang; Kunran Xu; Jie Yu 027; Yannan Xu; Peng Yuan; Yuan Wang; Yuting Chen; Yaxin Ding; Shuxian Lv; Zhiwei Dang; Tiancheng Gong; Yang Yang; et al. (Sci. China Inf. Sci., 2023)