Breakdown investigation in GaN-based MIS-HEMT devices. - Fabio Alessio Marino; Davide Bisi; Matteo Meneghini; Giovanni Verzellesi; Enrico Zanoni; Marleen Van Hove; Shuzhen You; Stefaan Decoutere; Denis Marcon; Steve Stoffels; Nicolo Ronchi; Gaudenzio Meneghesso (ESSDERC, 2014)

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. - Jie Hu; Steve Stoffels; Silvia Lenci; Nicolo Ronchi; Rafael Venegas; Shuzhen You; Benoit Bakeroot; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. - Tian-Li Wu; Denis Marcon; Steve Stoffels; Shuzhen You; Brice De Jaeger; Marleen Van Hove; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. - Shuzhen You; Xiangdong Li; Stefaan Decoutere; Guido Groeseneken; Zhanfei Chen; Jun Liu; Yuki Yamashita; Kazutoshi Kobayashi (ESSDERC, 2019)

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. - Kalparupa Mukherjee; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Shuzhen You; Karen Geens; Matteo Borga; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2020)

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. - Elena Fabris; Matteo Borga; Niels Posthuma; Ming Zhao; Brice De Jaeger; Shuzhen You; Stefaan Decoutere; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (IRPS, 2021)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)