The effect of uniaxial stress on band structure and electron mobility of silicon. - Enzo Ungersboeck; Wolfgang Gös; Siddhartha Dhar; Hans Kosina; Siegfried Selberherr (Math. Comput. Simul., 2008)

Notched gate MOSFET for capacitance reduction in RF SOI technology. - Lucas Antunes Tambara; Pascal Masson; Julien Amouroux; Stéphane Monfray; Julien Dura; Frederic Gianesello; Julien Babic; Romain Debroucke; Loic Welter; Siddhartha Dhar; Bernadette Gros; Clement Charbuillet; et al. (DTTIS, 2023)