Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. - Lars Knoll; Qing-Tai Zhao; Stefan Trellenkamp; Anna Schäfer; K. K. Bourdelle; Siegfried Mantl (ESSDERC, 2012)

Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. - Simon Richter; Svetlana A. Vitusevich; Sergii Pud; Jing Li; Lars Knoll; Stefan Trellenkamp; Anna Schäfer; Steffi Lenk; Qing-Tai Zhao; Andreas Offenhäusser; Siegfried Mantl; Konstantin K. Bourdelle (ESSDERC, 2013)

Experimental demonstration of improved analog device performance in GAA-NW-TFETs. - Christian Schulte-Braucks; Simon Richter; Lars Knoll; Luca Selmi; Qing-Tai Zhao; Siegfried Mantl (ESSDERC, 2014)

Si n-TFETs on ultra thin body with suppressed ambipolarity. - Chang Liu; Qinghua Han; Gia Vinh Luong; Keyvan Narimani; Stefan Glass; Andreas T. Tiedemann; Stefan Trellenkamp; Wenjie Yu; Xi Wang; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2016)

Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor. - Qinghua Han; Anran Gao; Keyvan Narimani; Yuelin Wang; Tie Li; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2017)

Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. - Gia Vinh Luong; Sebastiano Strangio; Andreas T. Tiedemann; Patric Bernardy; Stefan Trellenkamp; Pierpaolo Palestri; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2017)