The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination. - Munaf Rahimo; Frank Richter; Fabian Fischer 002; Umamaheswara Vemulapati; Arnost Kopta; Chiara Corvasce; Silvan Geissmann; Marco Bellini; Martin J. Bayer; Friedhelm Bauer (Microelectron. Reliab., 2016)

Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. - Paula Diaz Reigosa; Daniel Prindle; Gontran Pâques; Silvan Geissmann; Francesco Iannuzzo; Arnost Kopta; Munaf Rahimo (Microelectron. Reliab., 2016)

Extraction of dynamic avalanche during IGBT turn off. - Silvan Geissmann; L. De Michielis; Chiara Corvasce; Munaf Rahimo; M. Andenna (Microelectron. Reliab., 2017)