Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. - M. Azzaz; A. Benoist; Elisa Vianello; Daniele Garbin; Eric Jalaguier; Carlo Cagli; C. Charpin; Stefania Bernasconi; Simon Jeannot; T. Dewolf; G. Audoit; C. Guedj; et al. (ESSDERC, 2015)

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. - Adam Dobri; Simon Jeannot; Fausto Piazza; Carine Jahan; Jean Coignus; Luca Perniola; Francis Balestra (Microelectron. Reliab., 2017)

40nm SONOS Embedded Select in Trench Memory. - Radouane Habhab; Vincenzo Della Marca; Pascal Masson; Nadia Miridi; Clement Pribat; Simon Jeannot; Thibault Kempf; Marc Mantelli; Philippe Lorenzini; Jean-Marc Voisin; Arnaud Régnier; Stephan Niel; et al. (ESSDERC, 2023)