A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. - Pengfei Wang; Minhan Mi; Sirui An; Xiang Du; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. - Sirui An; Minhan Mi; Pengfei Wang; Sijia Liu; Qing Zhu; Meng Zhang; Zhihong Chen; Jielong Liu; Siyin Guo; Can Gong; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. - Can Gong; Minhan Mi; Yuwei Zhou; Pengfei Wang; Hanzhen Li; Xinyi Wen; Ting Meng; Sirui An; Xiang Du; Kai Cheng; Meng Zhang; Qing Zhu; et al. (Sci. China Inf. Sci., 2025)