A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. - Raul Cernea; Long Pham; Farookh Moogat; Siu Lung Chan; Binh Le; Yan Li; Shouchang Tsao; Taiyuan Tseng; Khanh Nguyen; Jason Li 001; Jayson Hu; Jong Park; et al. (ISSCC, 2008)

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. - Kazushige Kanda; Masaru Koyanagi; Toshio Yamamura; Koji Hosono; Masahiro Yoshihara; Toru Miwa; Yosuke Kato; Alex Mak; Siu Lung Chan; Frank Tsai; Raul Cernea; Binh Le; et al. (ISSCC, 2008)

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology. - Raul Cernea; Long Pham; Farookh Moogat; Siu Lung Chan; Binh Le; Yan Li; Shouchang Tsao; Taiyuan Tseng; Khanh Nguyen; Jason Li 001; Jayson Hu; Jonghak Yuh; et al. (IEEE J. Solid State Circuits, 2009)