A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction. - Can Liu; Zhihao Shen; Wei Mao 002; Bo Li; Xiaomeng Lv; Fuyi Li; Peng Xiao; Haiqiao Hong; Shirui Zhao; Siying Zheng; Xiaoxi Li; Xiao Yu; et al. (Sci. China Inf. Sci., 2025)

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges. - Xiao Yu; Ni Zhong; Yan Cheng; Tianjiao Xin; Qing Luo; Tiancheng Gong; Jiezhi Chen; Jixuan Wu; Ran Cheng; Zhiyuan Fu; Kechao Tang; Jin Luo; et al. (Sci. China Inf. Sci., 2025)