Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte. - Sk. Ziaur Rahaman; Siddheswar Maikap (Microelectron. Reliab., 2010)

A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer. - Ming-Chun Hong; Yao-Jen Chang; Yu-Chen Hsin; Liang-Ming Liu; Kuan-Ming Chen; Yi-Hui Su; Guan-Long Chen; Shan-Yi Yang; I-Jung Wang; Sk. Ziaur Rahaman; Hsin-Han Lee; Shih-Ching Chiu; et al. (VLSI Technology and Circuits, 2022)

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. - Ming-Hung Wu; Ming-Chun Hong; Ching Shih; Yao-Jen Chang; Yu-Chen Hsin; Shih-Ching Chiu; Kuan-Ming Chen; Yi-Hui Su; Chih-Yao Wang; Shan-Yi Yang; Guan-Long Chen; Hsin-Han Lee; et al. (VLSI Technology and Circuits, 2023)