A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. - Sneha Kabra; Harsupreet Kaur; Ritesh Gupta; Subhasis Haldar; Mridula Gupta; R. S. Gupta (Microelectron. J., 2006)

An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. - Sona P. Kumar; Anju Agrawal; Sneha Kabra; Mridula Gupta; R. S. Gupta (Microelectron. J., 2006)

Two-dimensional subthreshold analysis of sub-micron GaN MESFET. - Sneha Kabra; Harsupreet Kaur; Subhasis Haldar; Mridula Gupta; R. S. Gupta (Microelectron. J., 2007)

An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET. - Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R. S. Gupta (Microelectron. J., 2007)

Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. - Sona P. Kumar; Anju Agrawal; Rishu Chaujar; Sneha Kabra; Mridula Gupta; R. S. Gupta (Microelectron. J., 2007)