A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics. - Sohya Kudoh; Shun'ichiro Ohmi (IEICE Trans. Electron., 2015)

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics. - Sohya Kudoh; Shun'ichiro Ohmi (IEICE Trans. Electron., 2016)

Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory. - Sohya Kudoh; Shun'ichiro Ohmi (DRC, 2018)

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient. - Sohya Kudoh; Shun'ichiro Ohmi (IEICE Trans. Electron., 2018)

Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization. - Shun'ichiro Ohmi; Yizhe Ding; Sohya Kudoh (DRC, 2019)

In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering. - Shun'ichiro Ohmi; Shin Ishimatsu; Yuske Horiuchi; Sohya Kudoh (IEICE Trans. Electron., 2020)