Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device. - Sojin Jeong; Sangwoo Han; Ho-Jun Lee; Deokjoon Eom; Gisu Youm; Yejoo Choi; Seungjun Moon; Kyungjin Ahn; Jinju Oh; Changhwan Shin (IEEE Access, 2021)

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput. - Wanik Cho; Chanhui Jeong; Jongwoo Kim; Jongseok Jung; Keunseon Ahn; Jayoon Goo; Sangkyu Lee; Kayoung Cho; Tei Cho; Dauni Kim; Gwan Park; Yushin Ahn; et al. (ISSCC, 2025)