An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. - Sona P. Kumar; Anju Agrawal; Sneha Kabra; Mridula Gupta; R. S. Gupta (Microelectron. J., 2006)

Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. - Sona P. Kumar; Anju Agrawal; Rishu Chaujar; Sneha Kabra; Mridula Gupta; R. S. Gupta (Microelectron. J., 2007)

Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. - Sona P. Kumar; Anju Agrawal; Rishu Chaujar; Mridula Gupta; R. S. Gupta (Microelectron. J., 2008)

Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. - Sona P. Kumar; Anju Agrawal; Rishu Chaujar; R. S. Gupta; Mridula Gupta (Microelectron. Reliab., 2011)