Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. - Song-Hyeon Kuk; Jae-Hoon Han; Bong Ho Kim; Junpyo Kim; Sang-Hyeon Kim (IMW, 2023)

Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si. - Song-Hyeon Kuk; Jae-Hoon Han; Bong Ho Kim; Joon Pyo Kim; Sang-Hyeon Kim (VLSI Technology and Circuits, 2023)

Proposal of Block Erase and Verify Schemes for Ferroelectric NAND: Overcoming Critical Challenges from Threshold Voltage Polarity. - Song-Hyeon Kuk; Bong Ho Kim; Young-Keun Park; Hyeon-Seong Hwang; Jae-Hoon Han; Byung Jin Cho; Byung Chul Jang; Sang-Hyeon Kim (IMW, 2025)