Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology. - Youngseung Cho; Yoosang Hwang; Huijung Kim; Eunok Lee; Soojin Hong; Hyun-Woo Chung; Daeik Kim; Jinyoung Kim; Yong Chul Oh; Hyeongsun Hong; Gyo-Young Jin; Chilhee Chung (ESSDERC, 2012)

5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. - Hyunchul Kim; Jongeun Park; Insung Joe; Doowon Kwon; Joo Hyoung Kim; Dongsuk Cho; Taehun Lee; Changkyu Lee; Haeyong Park; Soojin Hong; Chongkwang Chang; Jingyun Kim; et al. (ISSCC, 2020)

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation. - Jongeun Park; Sungbong Park; Kwansik Cho; Taehun Lee; Changkyu Lee; Donghyun Kim; Beomsuk Lee; SungIn Kim; Ho-Chul Ji; Dongmo Im; Haeyong Park; Jinyoung Kim; et al. (ISSCC, 2021)