Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. - Soshi Sato; Kuniyuki Kakushima; Parhat Ahmet; Kenji Ohmori; Kenji Natori; Keisaku Yamada; Hiroshi Iwai (Microelectron. Reliab., 2011)

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. - D. Zade; Soshi Sato; Kuniyuki Kakushima; A. Srivastava; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Chandan Kumar Sarkar; Hiroshi Iwai (Microelectron. Reliab., 2011)

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor. - Soshi Sato; Kikuo Yamabe; Tetsuo Endoh; Masaaki Niwa (Microelectron. Reliab., 2016)

A novel memory test system with an electromagnet for STT-MRAM testing. - Ryo Tamura; N. Watanabe; Hiroki Koike; Hideo Sato; Shoji Ikeda; Tetsuo Endoh; Soshi Sato (NVMTS, 2019)