Modeling of High Frequency Noise in SOI MOSFETs. - Muthubalan Varadharajaperumal; Saurabh Sirohi; Sourabh Khandelwal; Ethirajan Tamilmani; Vaidyananthan Subramanian (VLSI Design, 2010)

BSIM - Industry standard compact MOSFET models. - Yogesh Singh Chauhan; Sriramkumar Venugopalan; Mohammed A. Karim; Sourabh Khandelwal; Navid Paydavosi; Pankaj Thakur; Ali M. Niknejad; Chenming Hu (ESSCIRC, 2012)

A compact charge-based physical model for AlGaN/GaN HEMTs. - F. M. Yigletu; Benjamín Iñíguez; Sourabh Khandelwal; Tor A. Fjeldly (RWS, 2013)

BSIM-CMG: Standard FinFET compact model for advanced circuit design. - Juan Pablo Duarte; Sourabh Khandelwal; Aditya Sankar Medury; Chenming Hu; Pragya Kushwaha; Harshit Agarwal; Avirup Dasgupta; Yogesh Singh Chauhan (ESSCIRC, 2015)

Modeling STI Edge Parasitic Current for Accurate Circuit Simulations. - Sourabh Khandelwal; Harshit Agarwal; Juan Pablo Duarte; Kaiman Chan; Sagnik Dey; Yogesh Singh Chauhan; Chenming Hu (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2015)

AC to variable DC(buck and boost) modular multilevel converter using half bridge and full bridge cells. - Karthika Haridas; Sourabh Khandelwal; Anandarup Das (ICIT, 2016)

Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG. - Pragya Kushwaha; K. Bala Krishna; Harshit Agarwal; Sourabh Khandelwal; Juan Pablo Duarte; Chenming Hu; Yogesh Singh Chauhan (Microelectron. J., 2016)

Full chip power benefits with negative capacitance FETs. - Sandeep Kumar Samal; Sourabh Khandelwal; Asif Islam Khan; Sayeef S. Salahuddin; Chenming Hu; Sung Kyu Lim (ISLPED, 2017)

Improved Charge Modeling of Field-Plate Enhanced AlGaN/GaN HEMT Devices Using a Physics Based Compact Model. - Kevin Kellogg; Sourabh Khandelwal; Neil Craig; Larry Dunleavy (BCICTS, 2018)

Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited). - Sourabh Khandelwal; Yogesh Singh Chauhan; Jason Hodges; Sayed Ali Albahrani (BCICTS, 2018)

A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs. - Jason Hodges; Sayed Ali Albahrani; Sourabh Khandelwal (BCICTS, 2019)

Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling. - Sourabh Khandelwal; Kevin Kellogg; Cole Hill; Hugo Morales; Larry Dunleavy; Gergana Drandova; Anita Pacheco; Jose Jimenez (BCICTS, 2019)

Analog Neuromorphic System Based on Multi Input Floating Gate MOS Neuron Model. - Ankit Tripathi; Mehdi Arabizadeh; Sourabh Khandelwal; Chetan Singh Thakur (ISCAS, 2019)

Design methodology considering evolution of statistical corners under long term degradation. - Hossein Eslahi; Dhawal Mahajan; Sayed Ali Albahrani; Sourabh Khandelwal (Microelectron. J., 2019)

Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs. - Sourabh Khandelwal; Petra Hammes; Marek Schmidt-Szalowski; Amit Dikshit; Menno Clerk (BCICTS, 2020)

SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch. - Sourabh Khandelwal; Brian Novak; Jordan Merkel; Ken A. Nagamatsu; Justin Parke; Mark Yu; Patrick Shea; Robert S. Howell (BCICTS, 2020)

Frequency Behaviour of FeFET-Based Ultra-Low-Power Coupled Oscillator Neurons. - Hossein Eslahi; Tara J. Hamilton; Sourabh Khandelwal (ISCAS, 2020)

An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers. - Hossein Eslahi; Sayed Ali Albahrani; Dhawal Mahajan; Sourabh Khandelwal (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020)

A Compact Model for SiC Power MOSFETs for Large Current and High Voltage Operation. - Cristino Salcines; Sourabh Khandelwal; Ingmar Kallfass (CoRR, 2021)

ASM-ESD - A comprehensive physics-based compact model for ESD Diodes. - Sourabh Khandelwal; D. Bavi (IRPS, 2022)

Ultra Compact and Linear 4-bit Digital-to-Analog Converter in 22nm FDSOI Technology. - Hossein Eslahi; Tara J. Hamilton; Sourabh Khandelwal (ISCAS, 2022)

Fast, Scalable, and Highly Accurate Thermal Modeling for Use in GaN/GaAs RF Circuit Modeling Platforms. - Gergana Drandova; Jose Jimenez; Jesse Wisch; Sourabh Khandelwal; Kirk Ashby (IRPS, 2024)

Deep Learning-Based ASM-ESD Forward I-V Parameter Extraction. - Fredo Chavez; Sourabh Khandelwal (ISQED, 2025)