A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs. - Nilesh Goel; Kaustubh Joshi 003; S. Mukhopadhyay; N. Nanaware; Souvik Mahapatra (Microelectron. Reliab., 2014)

Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. - Ankush Chaudhary; Ben Kaczer; Philippe J. Roussel; Thomas Chiarella; Naoto Horiguchi; Souvik Mahapatra (IRPS, 2015)

Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress. - Nilesh Goel; Tejas Naphade; Souvik Mahapatra (IRPS, 2015)

Aging-aware voltage scaling. - Victor M. van Santen; Hussam Amrouch; Narendra Parihar; Souvik Mahapatra; Jörg Henkel (DATE, 2016)

Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs. - Narendra Parihar; Souvik Mahapatra (IRPS, 2018)

A review of NBTI mechanisms and models. - Souvik Mahapatra; Narendra Parihar (Microelectron. Reliab., 2018)

TCAD modeling for reliability. - Paul Pfäffli; Hiu Yung Wong; X. Xu; Luca Silvestri; X. W. Lin; T. Yang; Ravi Tiwari; Souvik Mahapatra; Steve Motzny; Victor Moroz; Terry Ma (Microelectron. Reliab., 2018)

Controversial issues in negative bias temperature instability. - James H. Stathis; Souvik Mahapatra; Tibor Grasser (Microelectron. Reliab., 2018)

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. - Narendra Parihar; Uma Sharma; Richard G. Southwick; Miaomiao Wang 006; James H. Stathis; Souvik Mahapatra (IRPS, 2019)

Modeling the Interdependences Between Voltage Fluctuation and BTI Aging. - Sami Salamin; Victor M. van Santen; Hussam Amrouch; Narendra Parihar; Souvik Mahapatra; Jörg Henkel (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Hot Carrier Degradation in Cryo-CMOS. - Wriddhi Chakraborty; Uma Sharma; Suman Datta; Souvik Mahapatra (IRPS, 2020)

Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range. - Nilotpal Choudhury; Narendra Parihar; Souvik Mahapatra (IRPS, 2020)

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. - Nilotpal Choudhury; Uma Sharma; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2020)

BTI and HCD Degradation in a Complete 32 × 64 bit SRAM Array - including Sense Amplifiers and Write Drivers - under Processor Activity. - Victor M. van Santen; Simon Thomann; Chaitanya Pasupuleti; Paul R. Genssler; Narendra Gangwar; Uma Sharma; Jörg Henkel; Souvik Mahapatra; Hussam Amrouch (IRPS, 2020)

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. - Nilotpal Choudhury; Tarun Samadder; Ravi Tiwari; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2021)

Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI. - Dimple Kochar; Tarun Samadder; Subhadeep Mukhopadhyay 003; Souvik Mahapatra (IRPS, 2021)

Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs. - Satyam Kumar 003; Tarun Samadder; Karansingh Thakor; Uma Sharma; Souvik Mahapatra (IRPS, 2021)

A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake. - Tarun Samadder; Satyam Kumar 003; Karansingh Thakor; Souvik Mahapatra (IRPS, 2021)

Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress. - Nilotpal Choudhury; Ayush Ranjan; Souvik Mahapatra (IRPS, 2022)

Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs. - Himanshu Diwakar; Karansingh Thakor; Souvik Mahapatra (IRPS, 2022)

On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs. - Nirmaan Shanker; Li-Chen Wang; Suraj S. Cheema; Wenshen Li; Nilotpal Choudhury; Chenming Hu; Souvik Mahapatra; Sayeef S. Salahuddin (VLSI Technology and Circuits, 2022)

A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory. - Rashmi Saikia; Aseer Ansari; Souvik Mahapatra (IRPS, 2023)

Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories. - Karansingh Thakor; Nikhil Rangarajan; Himanshu Diwakar; Rashmi Saikia; Tarun Samadder; Souvik Mahapatra; Shyam Raghunathan; Yingda Dong (IMW, 2024)

Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology. - Leitao Liu; Jingtian Fang; Ashish Pal; Plamen Asenov; Mohit Bajaj; Bei Deng; Xi-Wei Lin; Souvik Mahapatra; Subi Kengeri; El Mehdi Bazizi (IRPS, 2024)

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions. - Priyankka Gundlapudi Ravikumar; Prasanna Venkatesan Ravindran; Khandker Akif Aabrar; Taeyoung Song; Sharadindu Gopal Kirtania; Dipjyoti Das; Chinsung Park; Nashrah Afroze; Mengkun Tian; Shimeng Yu; Ahmad Ehtesham Islam; Suman Datta; et al. (IRPS, 2024)

Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays. - Rashmi Saikia; Himanshu Rai; Souvik Mahapatra (IRPS, 2024)

A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions. - Karansingh Thakor; Payel Chatterjee; Souvik Mahapatra (IRPS, 2024)

The Importance of Gate Length Choice on NBTI Qualification in GAA-SNS FETs Under Normal and Overclocking Conditions. - Arnav Shaurya Bisht; Souvik Mahapatra (IRPS, 2025)

TCAD Based Isolation of Self-Heat Enhanced HCD and NBTI in GAA SNS p-FET. - Karansingh Thakor; Rai Sambhav; Rashmi Saikia; Souvik Mahapatra (IRPS, 2025)