Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width. - Jaeyi Chun; Srabanti Chowdhury (DRC, 2019)

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). - Maria Ruzzarin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Dong Ji; Wenwen Li; Silvia H. Chan; Anchal Agarwal; Chirag Gupta; Stacia Keller; Umesh K. Mishra; et al. (IRPS, 2019)

Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode. - Dong Ji; Burcu Ercan; Jia Zhuang; Lei Gu; Juan Rivas-Davila; Srabanti Chowdhury (DRC, 2020)

Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature. - Chenhao Ren; Mohamadali Malakoutian; Siwei Li; Srabanti Chowdhury (DRC, 2020)

Robust avalanche in GaN leading to record performance in avalanche photodiode. - Dong Ji; Burcu Ercan; Garret Benson; A. K. M. Newaz; Srabanti Chowdhury (IRPS, 2020)

Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management. - Srabanti Chowdhury (DRC, 2021)

Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination. - Ke Zeng; Srabanti Chowdhury; Brendan Gunning; Robert Kaplar; Travis Anderson (IRPS, 2021)

Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress. - Bhawani Shankar; Ke Zeng; Brendan Gunning; Rafael Perez Martinez; Chuanzhe Meng; Jack Flicker; Andrew Binder; Jeramy Ray Dickerson; Robert Kaplar; Srabanti Chowdhury (DRC, 2022)

Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization. - Bhawani Shankar; Zhengliang Bian; Ke Zeng; Chuanzhe Meng; Rafael Perez Martinez; Srabanti Chowdhury; Brendan Gunning; Jack Flicker; Andrew Binder; Jeramy Ray Dickerson; Robert Kaplar (IRPS, 2022)

On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials. - Mohamadali Malakoutian; Srabanti Chowdhury (BCICTS, 2023)

Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits. - Dennis Rich; Anna Kasperovich; Mohamadali Malakoutian; Robert M. Radway; Shiho Hagiwara; Takahide Yoshikawa; Srabanti Chowdhury; Subhasish Mitra (DAC, 2023)

A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology. - Rafael Perez Martinez; Masaya Iwamoto; Ana M. Banzer Morgado; Yiao Li; Roberto Tinti; Jianjun Xu; Chad Gillease; Steven Cochran; Bhawani Shankar; Else-Marie Schmidt; Zijian Song 003; Natalie Wagner; et al. (BCICTS, 2024)

Efficient Ultra-Dense 3D IC Power Delivery and Cooling Using 3D Thermal Scaffolding. - Dennis Rich; Tathagata Srimani; Mohamadali Malakoutian; Srabanti Chowdhury; Subhasish Mitra (ICCAD, 2024)

Compact Model Parameter Extraction via Derivative-Free Optimization. - Rafael Perez Martinez; Masaya Iwamoto; Kelly Woo; Zhengliang Bian; Roberto Tinti; Stephen P. Boyd; Srabanti Chowdhury (IEEE Access, 2024)

Robust Pareto Design of GaN HEMTs for Millimeter-Wave Applications. - Rafael Perez Martinez; Stephen P. Boyd; Srabanti Chowdhury (CoRR, 2024)

Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications. - Rafael Perez Martinez; Stephen P. Boyd; Srabanti Chowdhury (IEEE Access, 2025)