Origin of 1/f noise in graphene produced for large-scale applications in electronics. - Vidya Kochat; Anindita Sahoo; Atindra Nath Pal; Sneha Eashwer; Gopalakrishnan Ramalingam; Arjun Sampathkumar; Ryugu Tero; Tran Viet Thu; Sanjeev Kaushal; Hiroshi Okada; Adarsh Sandhu; Srinivasan Raghavan 002; et al. (IET Circuits Devices Syst., 2015)

ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. - Bhawani Shankar; Ankit Soni; Manikant Singh; Rohith Soman; K. N. Bhat; Srinivasan Raghavan 002; Navakanta Bhat; Mayank Shrivastava (VLSID, 2017)

On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs. - Bhawani Shankar; Ankit Soni; Sayak Dutta Gupta; R. Sengupta; Heena Khand; N. Mohan; Srinivasan Raghavan 002; Mayank Shrivastava (IRPS, 2018)

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities. - Sayak Dutta Gupta; Vipin Joshi; Bhawani Shankar; Swati Shikha; Srinivasan Raghavan 002; Mayank Shrivastava (IRPS, 2019)

First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. - Abhishek Mishra; Adil Meersha; Nagothu Karmel Kranthi; Kruti Trivedi; Harsha B. Variar; N. S. Veenadhari Bellamkonda; Srinivasan Raghavan 002; Mayank Shrivastava (IRPS, 2019)

Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform. - Ankit Rao; Sooraj Sanjay; Majid Ahmadi; Anirudh Venugopalrao; Navakanta Bhat; Bart Kooi; Srinivasan Raghavan 002; Pavan Nukala (CoRR, 2023)